Physics

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Optical response of a rare earth (RE)-doped SiO2 layer is known to deteriorate markedly at room temperature due to RE clustering. The key challenge is therefore to probe the ongoing processes at the microscopic level and the subsequent impact on the luminescence properties with increasing RE concentration. Here, we report how the Er electroluminescence in a metal-oxide-semiconductor structure has been affected by increasing Er content. Our results indicate that the Er oxide clustering is anticipated by the formation of Si-based oxygen-deficiency centers during postimplantation annealing and leads to a strong quenching of the short-wavelength (350-500 nm) Er electroluminescence. © 2009 American Institute of Physics.

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Applied Physics Letters

Correlation between the microstructure and electroluminescence properties of Er-doped metal-oxide semiconductor structures

It is generally believed that the 1.5 μm Er luminescence is enhanced by transferring energy from Si nanocrystals to the nearest Er3+ ions in Er-doped Si-rich SiO2 layers during optical pumping. Here, the influence of Ge nanocrystals instead of excess Si in the same environment is studied using electroluminescence technique on metal-oxide-semiconductor structures. An increase of the 400 nm electroluminescence intensity with a concomitant reduction of the Er-related emission is observed. This is explained in the light of an inverse energy transfer process from Er3+ to the Ge-related oxygen-deficiency centers. © 2009 American Institute of Physics.

Enhanced blue-violet emission by inverse energy transfer to the Ge-related oxygen deficiency centers via Er3+ ions in metal-oxide semiconductor structures

This paper reports on structural, optical, vibrational, and morphological properties of cobalt-doped CdS thin films, prepared by 90 keV Co+ implantation at room temperature. In this work, we have used cobalt concentration in the range of 0.34-10.8 at. %. Cobalt doping does not lead to the formation of any secondary phase, either in the form of metallic clusters or impurity complexes. However, with increasing cobalt concentration a decrease in the optical band gap, from 2.39 to 2.26 eV, is observed. This reduction is addressed on the basis of band tailing due to the creation of localized energy states in association with Urbach energy calculations. In addition, implantation gives rise to grain growth and increase in the surface roughness. Size and shape fluctuations of individual CdS grains, at higher fluences, give rise to inhomogeneity in strain. The results are discussed in the light of ion-matter interaction in the keV regime. © 2009 American Institute of Physics.

Journal of Applied Physics

Implantation-assisted Co-doped CdS thin films: Structural, optical, and vibrational properties

Type A N-fold supercharge admits a one-parameter family of factorizations into product of N first-order linear differential operators due to an underlying GL (2, C) symmetry. As a consequence, a type A N-fold supersymmetric system can have different intermediate Hamiltonians corresponding to different factorizations. We derive the necessary and sufficient conditions for the latter system to possess intermediate Hamiltonians for the N = 2 case. We then show that whenever it has (at least) one intermediate Hamiltonian, it can admit second-order parasupersymmetry and a generalized 2-fold superalgebra. As an illustration, we construct a set of generalized Pöschl-Teller potentials of this kind. © 2009 Elsevier Inc. All rights reserved.

Annals of Physics

Existence of different intermediate Hamiltonians in type A N-fold supersymmetry

We describe and discuss the unique electrical characteristics of an organic field-effect transistor in which the active layer consists of a type II lateral heterojunction located approximately midway between the source and drain. The two active semiconductors on either side of the junction transport only one carrier type each, with the other becoming trapped, which leads to devices that operate in only the steady state when there is balanced electron and hole injections from the drain and source. We describe the unique transfer characteristics of such devices in two material systems. © 2009 American Institute of Physics.

Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors

The synthesis and characterization of solution processable donor-acceptor-donor (D-A-D) based conjugated molecules with varying ratios of thiophene as donor (D) and benzothiadiazole as acceptor (A) are reported. Optical, electrochemical, thermal, morphological and organic thin film transistor (OTFT) device properties of these materials were investigated. The thermal and polarized optical microscope analysis indicates that the materials having higher D/A ratios exhibit both liquid crystalline (LC) and OTFT behavior. AFM analysis of the materials having D/A ratios of 3 and 4 (3T1B and 4T1B) show well ordered structures, resulting from strong π-π interchain interactions compared to the other molecules in this study. A XRD patterns for 3T1B and 4T1B thin films also shows high crystalline ordering. Solution processed OTFTs of 3T1B and 4T1B have shown un-optimized charge carrier mobilities of 2 × 10-2 cm2 V-1 s -1 and 4 × 10-3 cm2 V-1 s -1, respectively on bare Si/SiO2 substrate. © The Royal Society of Chemistry 2009.

Journal of Materials Chemistry

Synthesis, characterization and comparative study of thiophene- benzothiadiazole based donor-acceptor-donor (D-A-D) materials

Information on valence orbitals and electronic interactions in single crystal systems can be obtained through orientation-dependent X-ray measurements, but this can be problematic for a cubic system. Polarisation-dependent X-ray absorption measurements are common, but are dominated by dipole transitions which, for a cubic system, are isotropic even though a cubic system is not. Many edges, particularly for transition metals, do have electric quadrupole features that could lead to dichroism but proximity to the dipole transition can make interpretation challenging. X-ray Raman Spectroscopy (XRS) can also be used to perform orientation-dependent near-edge measurements - not only dependent on the direction of the momentum transfer but also its magnitude, q. Previous XRS measurements on polycrystalline materials revealed that multipole (higher order than dipole) transitions are readily observable in the pre-threshold region of rare earth N4,5 edges, actually replacing the dipole at high-q. We have extended these studies to examine orientation-dependent XRS for CeO2 and MnO single crystals, as prototype systems for theoretical treatment. Dichroism is observed at both the Ce N4,5 and Mn M2,3 edges in these cubic materials. {\textcopyright} 2009 IOP Publishing Ltd.

Journal of Physics: Conference Series

Orientation-dependent X-ray Raman scattering from cubic crystals: Natural linear dichroism in MnO and CeO2

In this work we investigated the correlation between the EL, the electrical properties and the microstructure of Eu-implanted MOS light emitting devices. The EL spectrum shows a red EL line centered at 618 nm which is usually assigned to Eu3+ and a broad blue-green EL band attributed to Eu2+. It was found that the red EL is favored by low injection currents, low Eu concentrations, lower anneal temperatures and shorter anneal times, especially for flash lamp annealing. These properties are correlated with microstructural changes triggered by ion implantation and annealing, especially with the formation and ripening of Eu or Eu oxide clusters which strongly quench the red EL. Finally, the influence of Eu agglomerations at the injecting interface on the electrical properties of the light emitter is discussed. © 2009 Elsevier B.V. All rights reserved.

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

The correlation between electroluminescence properties and the microstructure of Europium-implanted MOS light emitting diodes

A recent, major, puzzle in the core-level photoemission spectra of doped manganites is the observation of a 1-2 eV wide shoulder with intensity varying with temperature T as the square of the magnetization over a T scale of order 200 K, an order of magnitude less than electronic energies. This is addressed and resolved here, by extending a recently proposed two-fluid polaron-mobile electron model for these systems to include core-hole effects. The position of the shoulder is found to be determined by Coulomb and Jahn-Teller energies, while its spectral weight is determined by the mobile electron energetics which is strongly T and doping dependent, due to annealed disorder scattering from the polarons and the t2g core spins. Our theory accounts quantitatively for the observed T dependence of the difference spectra and furthermore, explains the observed correspondence between spectral changes due to increasing doping and decreasing T. Copyright {\textcopyright} EPLA, 2008.

Theory of the unusual doping and temperature dependence of photoemission spectra in manganites

A generalized non-Hermitian oscillator Hamiltonian is proposed that consists of additional linear terms which break PT-symmetry explicitly. The model is put into an equivalent Hermitian form by means of a similarity transformation and the criterion of N-fold supersymmetry with a position-dependent mass is shown to reside in it. © 2008 Elsevier B.V. All rights reserved.