Prof. Aloke Kanjilal is an expert in thin film deposition and characterization. He has made fundamental contributions in various fields ranging from memory to optoelectronic devices. His expertise in materials synthesis and various analyses techniques for studying morphological, structural, chemical, electronic, transport and optical properties in variety of materials are the advantage for successful execution of various frontline problems. He received extensive experience in growth and modification of materials by ion beam technique from the time of his PhD at the Department of Physics in Indian Institute of Technology Delhi. He was also engaged in developing low-energy ion-beam facilities, and has been involved in understanding the mechanism behind the formation of ion beam induced self-organized nanopatterns on semiconductors and other materials surfaces. He is a recipient of prestigious Alexander von Humboldt Fellowship and has been elected as a Member of National Academy of Sciences India (MNASc). He is also an Alumni of Alexander von Humboldt Foundation, Bonn, Germany, and is Lifetime Members of Indian Physics Association (IPA), Materials Research Society of India (MRSI), Ion Beam Society of India (IBSI), Indian Physics Teachers Association (IPTA), Electron Microscope Society of India (EMSI). He published more than 85 articles in reputed international journals and conferences on novel experimental results and ideas of processing and characterization of nanoscale materials and devices. He has two German patents. He is at present actively working on oxide materials and their uses in resistive switching devices, sensors, radiation detectors, light emitting devices, and solar cells.
My research interests are interdisciplinary in nature that deals with a variety of outstanding problems in science and technology. The effort is centred on physics and engineering, involving ideas, techniques, and conundrums from other fields such as material science, ion beam physics, optics, magnetism and chemistry. The motivations are the following: