Electrical Engineering

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The homogeneous boundary value problem existing in the electromagnetic wave propagation in a dielectricloaded perfectly conducting tape helix with infinitesimal tape thickness is investigated in this study. The ill-posed boundary value problem is regularised using the mollification method. The homogeneous boundary value problem is solved for the dielectric loaded perfectly conducting tape helix taking into account the exact boundary conditions for the perfectly conducting dielectric loaded tape helix. The solved approximate dispersion equation takes the form of the solvability condition for an infinite system of linear homogeneous equations namely, the determinant of the infinite order coefficient matrix is zero. For the numerical computation of the dispersion equation, all the entries of the symmetrically truncated version of the coefficient matrix are estimated by summing an adequate number of the rapidly converging series for them. The tape-current distribution is estimated from the null-space vector of the truncated coefficient matrix corresponding to a specified root of the dispersion equation. The numerical results suggest that the propagation characteristic computed by the anisotropically conducting model (that neglects the component of the tape-current density perpendicular to the winding direction) is only an abstinent approximation to consider for moderately wide tapes. © The Institution of Engineering and Technology 2016.

(SoE) School of Engineering

IET Microwaves, Antennas and Propagation

Propagation of electromagnetic waves guided by perfectly conducting model of a tape helix supported by dielectric rods

This work presents the design and simulation of a zinc oxide based thin film bulk acoustic resonator (TFBAR) bandpass filter for 2.6 GHz band applications. Third and fifth-order filters in ladder topology are designed and compared. The third-order filter has an insertion loss of 1.62 dB and return loss of 18.97 dB with a bandwidth of 80 MHz whereas the fifth-order filter has insertion loss, return loss, and bandwidth of 2.85 dB, 25.28 dB, and 60 MHz, respectively. With a central frequency of 2.67 GHz, the designed filter has applications in the 2.6 GHz (2500-2690 MHz) band, which has been identified by the International Telecommunication Union as a global frequency band for mobile broadband services. © 2016 IETE.

IETE Journal of Research

Design and Simulation of a Zinc Oxide Thin Film Bulk Acoustic Resonator Filter for 2.6 GHz Band Applications

In this paper, a generalized algorithm for the physical relocation of the modules with a fixed electrical connection (PRM-FEC) in total cross tied (TCT) configuration of an m× n (where m and n are the number of rows and columns) photovoltaic array is presented for digit m that is either odd or even number. This rearrangement of the TCT configuration distributes the shadows over the array, and hence, it increases the power output of an array under partial shading conditions. The proposed scheme is simple and cost effective. The comparison of power generated by an array with the TCT, electrical array reconfiguration, and the PRM-FEC configuration is performed with MATLAB simulation and also the simulation results are validated with experimental results. The performance of the PRM-FEC configuration is superior to the TCT configuration. © 1963-2012 IEEE.

World University root node

IEEE Transactions on Electron Devices

Extraction of Maximum Power from a PV Array under Nonuniform Irradiation Conditions

Copper–tin (Cu–Sn) intermetallic alloy coating was developed on mild steel substrate by galvanostatic electrodeposition technique from sulfate-based acidic electrolyte containing Laprol as additive. The homogenous coating containing cubic δ phase with composition of 32.6% Sn was obtained, when a current of −8.5 mA was made to flow through the electrochemical bath. The optimized coating with thickness of ∼0.4–3 μm exhibits ∼80% specular reflectance. The coating has a hardness of 2.6 GPa, suggesting a good scratch resistance property. The experimental results also suggest that the hydrophobic surface of Cu–32.6% Sn thin film can be potentially used as an attractive coating for solar reflector application under dusty and humid conditions. © 2016

Fulltext

Applied Thermal Engineering

Electrodeposition of δ-phase based Cu–Sn mirror alloy from sulfate-aqueous electrolyte for solar reflector application

This paper deals about making a numerical simulator for observing the self-organization phenomenon like current filament formation in the negative differential conductivity (NDC) region of operation in a device using MATLAB environment. Emphasis is laid on choosing the appropriate boundary conditions in simulator to observe the NDC part of the device Current-Voltage (I - V) characteristics along with the appropriate isothermal physical models are included for mobility and the recombination-generation. The simulator used in this paper is designed to observe NDC region in S-shaped NDC (SNDC) devices like BJT and similar conditions can be used to observe the field domains in the N-shaped NDC (NNDC) devices with appropriate changes. Dirichlet and Neumann boundary conditions are applied to BJT and I - V characteristics of the developed device simulator are compared with the commercial available TCAD device simulator (i.e., Sentaurus). © Published under licence by IOP Publishing Ltd.

Journal of Physics: Conference Series

Two Dimensional Numerical Simulator for Modeling NDC Region in SNDC Devices

This paper presents novel capacitor less dynamic random access memory (DRAM) cells through band-gap engineered silicon-germanium (SiGe) junction less double gate field effect transistor (JL-DGFET) using two-dimensional commercial TCAD device simulator. The design window of capacitor less DRAM cell and its operations have been described. We observe hysteresis current-voltage characteristic and steep change in sub-threshold slope (SS) in SiGe JL-DGFET. The correlation between the IDS - VGS and IDS - VDS characteristics of the device during different operation of memory cells are discussed. Furthermore, high value of bipolar gain (i.e. β) is observed in optimally designed SiGe JL-DGFET transistors, which can be utilized for the improvement of sensing margin in dynamic memories. The results presented in this paper can provide an opportunity for future DRAM design in deep nanometer technology. © 2016 IEEE.

Proceedings of the IEEE International Conference on VLSI Design

A Novel Capacitorless DRAM Cell Design Using Band-Gap Engineered Junctionless Double-Gate FET

In wireless sensor networks (WSN), extensive life span requirement for diverse application and inadequate energy storage ability of sensor nodes has led to the discovery of a new field for reducing the power consumed by nodes. To increase the sensor node's life period, protocols have to be energy efficient so as to reduce energy consumption in each layer mainly physical layer (power consumption control), MAC layer (retransmission control) and network layer (routing protocol). In this paper, we explore various protocols in MAC layer, and Network layer to provide an energy efficient network. © 2015 IEEE.

Proceedings of the 2015 39th National Systems Conference, NSC 2015

Energy efficient multilayer protocol for wireless sensor networks

Least squares twin support vector machines (LSTSVM) [1] is a popular kernel-based SVM formulation for binary classification tasks. LSTSVM is an efficient algorithm to learn linear/nonlinear classification boundaries as it just requires solution of two linear systems of equations. LSTSVM has been applied to text categorization with simple bag-of-words representation and conventional feature selection. The disadvantage of this approach is that it is likely to hurt the classification performance due to loss of information as the features that are ranked lowest are discarded. However, as LSTSVM training involves solving for linear systems of equations of the size of input space dimension it is extremely important to keep the input dimension small and hence all features cannot be considered for training. Thus there is a need to learn a dense concept that combines many features without throwing them and produces a compact representation. Distributional clustering of words is an efficient alternative to traditional feature selection measures. Unlike feature selection measures which discard low ranked features, it generates extremely compact representation for text documents in word cluster space. It has been shown that SVM's classification performance is better/on par when using this new representation compared to traditional bag-of-words despite the advantages of reduced dimensionality of text documents. In this paper, we propose a new text categorization system combining distribution clustering of words for document representation and linear LSTSVM for document classification. We verified its effectiveness by conducting experiments on two benchmark text corpuses: WebKB, SRAA and comparing its results with SVMlight based classification in a similar setting. © 2015 IEEE.

Least squares twin support vector machines for text categorization

It is mandatory to keep total harmonic distortion in output of most inverters below a prescribed limit. The harmonic distortions caused due to non-linear loads may not get corrected by simple PID controllers. Repetitive controllers are more effective in such situations. Often repetitive controllers are used as add-on block to the conventional PID controller. Design of repetitive controller can be easily implemented on digital platform. Some controller parameters may have to be decided on trial and error basis. © 2015 IEEE.

Application of repetitive control for removal of harmonic distortions from inverter output

This paper presents the design of a Memristor based startup circuit for self biased circuits. Memristor has many advantages over conventional CMOS devices such as low leakage current at nanometer scale, easy to manufacture. In this work the switching characteristics of memristor is utilized. First the theoretical equations describing the switching behavior of memristor are investigated. To prove the switching capability of Memristor, a startup circuit based on memristor is proposed which uses series combination of Memristor and capacitor. Proposed circuit is compared with the previously reported MOSFET based startup circuits. Comparison of different circuits was done to validate the results. Simulation results show that memristor based circuit can attain on (I = 12.94 μA) to off state (I = 1.2 μA) in 25 ns while the MOSFET based startup circuits take on (I = 14.19 μA) to off state (I = 1.4 μA) in more than 90 ns. The benefit comes in terms of area because the number of components used in the circuit are lesser than the conventional startup circuits. © 2016 Author(s).