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Shiv Nadar University

(SoNS) School of Natural Sciences

Tris(biguanide)manganese(IV), [Mn(LH2)3]4+ (LH2 = biguanide, C2N5H7), quantitatively oxidises Fe2+ to Fe3+ and is itself reduced to Mn2+ with almost quantitative (&gt; 95%) release of biguanide, The reaction rate strongly depends on added Fe3+; in the presence of externally added Fe3+, the reaction shows a clear first-order dependence in [MnIV], whereas in the absence of any added Fe 3+, an initial quick loss of MnIV is associated with a subsequent very sluggish decay. Two consecutive one-electron transfer inner-sphere steps are proposed for the entire redox process where [Mn(LH 2)3]3+, the initial one-electron-reduced product of MnIV, is believed to be a steady-state intermediate. © Wiley-VCH Verlag GmbH &amp; Co. KGaA, 69451 Weinheim, Germany, 2004.

Chemistry

World University root node

European Journal of Inorganic Chemistry

Kinetics and mechanism of oxidation of Fe2+ by the tris(biguanide)manganese(IV) ion in aqueous acid media

The photo-generated time-of-flight electron mobility measurements in 2,5-dibenzthiazolyl thiophene show weak field dependent high electron mobility, typically of the order of 1.21 × 10-4 cm2/Vs at 2.5 × 105 V/cm, which is two orders of magnitude higher than that of Alq3 complex. © 2004 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim.

Physics

Physica Status Solidi (A) Applied Research

Photo-generated time-of-flight mobility measurements in novel electron transport material: 2,5-dibenzthiazolyl thiophene

The origin of ferromagnetism in a metastable phase rather than by carrier-induced interaction between separated Mn atoms in ZnO in a low-temperature-processed MnO2-ZnO system was demonstrated. It was observed that the ferromagnetism persists up to ∼980 K. It was shown that a uniform solution of Mn in ZnO does not form under low-temperature processing. The direct low-temperature film growth of Zn-incorporated Mn oxide shows ferromagnetism at low Zn concentration for an optimum oxygen growth pressure.

Nature Materials

On the origin of high-temperature ferromagnetism in the low-temperature-processed Mn-Zn-O system

Chemically guided solid phase epitaxy of α-quartz after Rb +-ion implantation and thermal annealing in 18O 2 was studied in order to clarify the role of the alkali ions and oxygen during this process. In particular, the influence of the 18O2 gas pressure and Rb+-ion fluence was investigated via Rutherford Backscattering Channeling and Time-of-Flight Elastic Recoil Detection techniques. Complete or partial epitaxy was observed, depending on the Rb-fluence, annealing temperature, and oxygen pressure. The recrystallization rate increased with increasing ion fluence, while the oxygen pressure had only little influence on the recovery process. Among these three parameters, the annealing temperature plays the most important role. © 2003 Elsevier B.V. All rights reserved.

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Chemically guided epitaxy of Rb-ion amorphized α-quartz: The roles of Rb and oxygen

The stem-loop III (SLIII) structure within the 5′untranslated region has been shown to be critical for internal initiation of translation of Hepatitis C virus (HCV). Using 'Single Strand Conformation Polymorphism (SSCP)' of the SLIII region we have investigated for natural mutations and demonstrated presence of some non-covariant changes in certain sub-domains. However, overall SLIII-RNA structure was found to be phylogenetically conserved. Additionally, by SSCP analysis we have determined the genotype of 50 HCV isolates collected from Southern India, 25 random samples were confirmed by DNA sequencing. Results showed the prevalence of genotype 1 in this part of India. © Springer-Verlag 2004.

Life Sciences

Archives of Virology

Phylogenetic conservation of the stem-loop III structure of the 5′untranslated region of Hepatitis C virus RNA among natural variants in samples collected from Southern India

In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV 14N2+ ion implantation in 57Fe(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy, X-ray diffraction, and conversion electron Mössbauer spectroscopy after implantation and post-implantation annealing treatments. The irradiations caused little sputtering, but significant interface mixing. During implantation, iron nitrides, but no silicides were formed, even at the highest nitrogen fluence of 2 × 1017 ions/cm 2. When heating these samples in vacuo up to 700°C, the iron-rich phases ε-Fe3N and γ-Fe4N were produced. Starting at 600°C the suicide phase β-FeSi2 was also identified.

Applied Physics A: Materials Science and Processing

Nitrogen irradiation of Fe/Si bilayers: Nitride versus suicide phase formation

A one-dimensional Schrödinger equation with position-dependent effective mass in the kinetic-energy operator is studied in the framework of an so(2,1) algebra. New mass-deformed versions of Scarf II, Morse, and generalized Pöschl-Teller potentials are obtained. Consistency with the intertwining condition is pointed out.

Czechoslovak Journal of Physics

Effective-mass Schrödinger equation and generation of solvable potentials

We show that the conditionally exactly solvable potential of Dutt et al (1995 J.Phys. A: Math. Gen. 28 L107) and the exactly solvable potential from which it is derived form a dual system.

Fulltext

Journal of Physics A: Mathematical and General

Conditionally exactly solvable potential and dual transformation in quantum mechanics

Physical Review-Section B-Condensed Matter

RAPID COMMUNICATIONS-Electronic structure: Wide-band, narrow-band, and strongly correlated systems-Ab initio Wannier-function-based many-body approach to Born charges of crystalline insulators (4

Lead sulfide (PbS) nanoparticle films were chemically grown on glass, quartz and silicon substrates. Structure and size of PbS nanoparticles were characterized by X-ray diffraction and transmission electron microscopy (TEM), respectively. Large optical band gap has been observed in these films. The decreases in dc-conductivity, Hall mobility and carrier concentration with reducing grain size were also examined. Heterojunctions of p-PbS/n-Si were fabricated and photovoltaic effect was observed in these self-assembled heterojunctions. © 2003 Elsevier B.V. All rights reserved.