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Shiv Nadar University

(SoNS) School of Natural Sciences

In this paper detailed studies on modification of structural and magnetic properties of Ni-doped hafnium oxide (HfO2) thin films are reported. We used 200 keV Ni beam for doping of Ni. For homogeneous dispersion and activation of doped Ni ions, 120 MeV Ni swift heavy ions (SHI) irradiation was used. This unique combination of Ni doping by ion beam and dispersing and activating by Ni SHI irradiation of HfO2 films is reported for the first time. The origin of ferromagnetism in the Ni-doped HfO2 thin films is investigated. We demonstrate the cluster free nature of our film using cross-sectional high resolution transmission microscopy and magnetization versus temperature data. Rutherford backscattering data are used to establish that Ni ions are implanted in the HfO2 matrix at the predicted location. Dispersion of implanted Ni and lattice defects such as oxygen vacancies are attributed to be the main source of ferromagnetism. The observed magnetic moment is too large to be attributed to any secondary phase/magnetic clusters. © 2010 IOP Publishing Ltd.

World University root node

Physics

Journal of Physics D: Applied Physics

Room temperature ferromagnetism in Ni-doped HfO2 thin films

APS March Meeting Abstracts

Dipole-forbidden 5d-5f Electronic Structure in Actinide Systems

We report nonresonant inelastic x-ray scattering from the semicore 5d levels of several actinide compounds. Dipole-forbidden, high-multipole features form a rich bound-state spectrum dependent on valence electron configuration and spin-orbit and Coulomb interactions. Cross-material comparisons, together with the anomalously high Coulomb screening required for agreement between atomic-multiplet theory and experiment, demonstrate sensitivity to the neighboring electronic environment, such as is needed to address longstanding questions of electronic localization and bonding in 5f compounds. {\textcopyright} 2010 The American Physical Society.

Fulltext

Physical Review B - Condensed Matter and Materials Physics

Probing electronic correlations in actinide materials using multipolar transitions

Genetic diversity among 63 mango genotypes (Mangifera indica L.) was investigated using Inter-Simple Sequence Repeat (ISSR) markers. A total of 334 scorable amplification products were detected with 28 ISSR primers of which 331 (99.10%) were polymorphic. Most of the primers (89.29%) exhibited 100% polymorphism. Primers UBC-812 and UBC-891 identified with the highest number of genotypes with unique fingerprints (53). The highest number of different fingerprints (58) was obtained with primer UBC-812, while the lowest number of different fingerprints (17) was obtained with primer ISSR-5. Primers UBC-812, UBC-891, UBC-808 and UBC-836 were found to be of high value for fingerprinting in mango as they were able to resolve 58, 57, 55 and 55 of 63 mango genotypes selected for the study, respectively. The Jaccard's similarity values ranged from 0.25 (between 'Cambodiana' and 'Mombasa') to 0.79 (between 'K-1' and 'K-3') with a mean of 0.53. UPGMA tree constructed on ISSR data on the basis of Jaccard's similarity coefficient clustered 55 of 63 mango genotypes into six major groups, however eight mango genotypes remained unclustered. The Cluster 1 comprised of mainly south Indian genotypes, while Cluster 2 comprised of mainly man-made hybrids and genotypes from the Northern and Eastern regions of India. Genotypes indigenous to Western parts of India grouped in Cluster 3. Cluster 4 had the exotic genotypes introduced from Brazil, while Clusters 5 and 6 comprised of Floridan mango genotypes. UPGMA clustering of ISSR data showed good correspondence with pedigree, geographical separation and embryo types, i.e. mono-orpoly-embryonic.

Life Sciences

Indian Journal of Horticulture

Assessment of genetic diversity in mango using inter-simple sequence repeat markers

The real-time polymerase chain reaction (PCR) data requires normalization with an internal control gene expressed at constant levels under all the experimental conditions being analyzed for accurate and reliable gene expression results. In this study, the expression of 12 candidate internal control genes, including ACT1, EF1α, GAPDH, IF4a, TUB6, UBC, UBQ5, UBQ10, 18SrRNA, 25SrRNA, GRX and HSP90, in a diverse set of 18 tissue samples representing different organs/developmental stages and stress conditions in chickpea (Cicer arietinum L.) has been validated. Their expression levels vary considerably in various tissue samples analyzed. The expression levels of EF1α and HSP90 are most constant across various organs/developmental stages analyzed. Similarly, the expression levels of IF4a and GAPDH are most constant across various stress conditions. A set of two most stable genes is found sufficient for accurate and reliable normalization of real-time PCR data in the given set of tissue samples of chickpea. The genes with most constant expression identified in this study should be useful for normalization of gene expression data in a wide variety of tissue samples in chickpea. © 2010 Elsevier Inc. All rights reserved.

Biochemical and Biophysical Research Communications

Validation of internal control genes for quantitative gene expression studies in chickpea (Cicer arietinum L.)

A copolymer comprising 1,4-diketopyrrolo[3,4-c]pyrrole (DPP) and thieno[3,2-b]thiophene moieties, PDBT-co-TT, shows high hole mobility of up to 0.94 cm2 V-1 s-1 in organic thin-film transistors. The strong intermolecular interactions originated from π-π stacking and donor-acceptor interaction lead to the formation of interconnected polymer networks having an ordered lamellar structure, which have established highly efficient pathways for charge carrier transport. © 2010 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim.

Advanced Materials

A high mobility P-type DPP-thieno[3,2-b]thiophene copolymer for organic thin-film transistors

Random matrix model for the Nakagami-q (Hoyt) fading in multiple-input multiple-output (MIMO) communication channels with arbitrary number of transmitting and receiving antennas is considered. The joint probability density for the eigenvalues of H† H† (or {H H†), where H† is the channel matrix, is shown to correspond to the Laguerre crossover ensemble of random matrices and is given in terms of a Pfaffian. Exact expression for the marginal density of eigenvalues is obtained as a series consisting of associated Laguerre polynomials. This is used to study the effect of fading on the Shannon channel capacity. Exact expressions for higher order density correlation functions are also given which can be used to study the distribution of channel capacity. © 2010 IEEE.}, author_keywords={Channel capacity; Fading distributions; Hoyt distribution; Laguerre crossover ensemble; Multiple-input multiple-output (MIMO) channels; Nakagami-q distribution; Random matrices}, keywords={Hoyt distribution; Laguerre; Multiple-input multiple-output channels; Nakagami; Nakagami-q distribution; Random matrices, Distribution functions; Eigenvalues and eigenfunctions; Fading channels; Probability density function; Receiving antennas, Channel capacity}, funding_details={Council of Scientific and Industrial Research, IndiaCouncil of Scientific and Industrial Research, India, CSIR}, funding_text_1={Manuscript received August 03, 2009; revised December 08, 2009. Current version published April 21, 2010. S. Kumar was supported by CSIR India through a fellowship. The authors are with the School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067, India (e-mail: skumar.physics@gmail.com; ap0700@mail.jnu.ac.in). Communicated by A. L. Moustakas, Associate Editor for Communications. Digital Object Identifier 10.1109/TIT.2010.2044060}, references={Simon, M.K., Alouini, M.-S., (2000) Digital Communication Over Fading Channels: A Unified Approach to Performance Analysis, , Hoboken, NJ: Wiley; Simon, M.K., Alouini, M.-S., A unified approach to the performance analysis of digital communication over generalized fading channels (1998) Proc. IEEE, 86 (9), pp. 1860-1877. , Sep; Foschini, G.J., Gans, M.J., On limits of wireless communications in a fading environment when using multiple antennas (1998) Wireless Pers. Commun., 6 (2), pp. 311-335. , Mar; Telatar, I.E., Capacity of multi-antenna Gaussian channels (1999) Eur. Trans. 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Theory, 52 (12), pp. 5336-5351. , Dec; Ghaderipoor, A., Tellambura, C., Noori, M., On the eigenvalue distribution of correlated MIMO channels by character expansion of groups (2008) Proc. IEEE Global Telecommunications Conf, pp. 1-5. , Dec; Marques, P.M., Abrantes, S.A., On the derivation of the exact, closed-form capacity formulas for receiver-sided correlated MIMO channels (2008) IEEE Trans. Inf. Theory, 54 (3), pp. 1139-1161. , Mar; Kang, M., Alouini, M.-S., Quadratic forms in complex Gaussian matrices and performance analysis of MIMO systems with co-channel interference (2004) IEEE Trans. Wireless Commun., 3 (2), pp. 418-431. , Mar; Ordôñez, L.G., Palomar, D.P., Fonollosa, J.R., Ordered eigenvalues of a general class of Hermitian random matrices and performance analysis of MIMO systems (2008) Proc. IEEE Conf. Communications, pp. 3846-3852. , May; Nakagami, M., The m-distribution-A general formula of intensity distribution of rapid fading (1960) Statistical Methods in Radio Wave Propagation, pp. 3-36. , New York: Pergamon; Müller, A., Speidel, J., Ergodic capacity and information outage probability of MIMO Nakagami-m keyhole channels with general branch parameters (2007) Proc. Wireless Communications and Networking Conf, pp. 2184-2189. , Mar; Fraidenraich, G., Lévêque, O., Cioffi, J.M., On the MIMO channel capacity for the Nakagami-m channel (2008) IEEE Trans. Inf. Theory, 54 (8), pp. 3752-3757. , Aug; Sagias, N.C., Karagiannidis, G.K., Gaussian class multivariate Weibull distributions: Theory and applications in fading channels (2005) IEEE Trans. Inf. Theory, 51 (10), pp. 3608-3619. , Oct; Hoyt, R.S., Probability functions for the modulus and angle of the normal complex variate (1947) Bell Syst. Tech. J., 26, pp. 318-359. , Apr; Fraidenraich, G., Lévêque, O., Cioffi, J.M., On the MIMO channel capacity for the dual and asymptotic cases over Hoyt channels (2007) IEEE Commun. Lett., 11 (1), pp. 31-33. , Jan; Chytil, B., The distribution of amplitude scintillation and the conversion of scintillation indices (1967) J. Atmos. Terr. Phys., 29, pp. 1175-1177. , Sep; Annamalai, A., Tellambura, C., Bhargava, V.K., Simple and accurate methods for the outage analysis in cellular mobile radio systems: A unified approach (2001) IEEE Trans. Commun., 49 (2), pp. 303-316. , Feb; Youssef, N., Wang, C.-X., Pätzold, M., A study on the second order statistics of Nakagami-Hoyt mobile fading channels (2005) IEEE Trans. Veh. Technol, 54 (7), pp. 1259-1265. , Jul; Smith, P.J., Shafi, M., On a Gaussian approximation to the capacity of wireless MIMOsystems (2002) Proc. IEEE Int. Conf. Communications, 1, pp. 406-410; Ge, H., Wong, K.D., Barton, M., Liberti, J.C., Statistical characterization of MIMO channel capacity (2002) Proc. IEEE Wireless Communications and Networking Conf, 2, pp. 789-793. , Mar; Kamath, M.A., Hughes, B.L., Yu, X., Gaussian approximations for the capacity of MIMO Rayleigh fading channels (2002) Proc. 36th Asilomar Conf. Signals, Systems and Computers, 1, pp. 614-618. , Nov; Zhao, Y., Zhao, M., Xiao, L., Wang, J., Analytical expression for the MIMO channel capacity (2006) Tsinghua Sci. Technol., 11 (3), pp. 271-277. , Jun; Chizhik, D., Foschini, G., Gans, M., Valenzela, R., Keyholes, correlations, and capacities of multielement transmit and receive antennas (2002) IEEE Trans. Wireless Commun., 1 (2), pp. 361-368. , Apr; Shin, H., Lee, J.H., Capacity of multiple-antenna fading channels: Spatial fading correlation, double scattering, and keyholes (2003) IEEE Trans. Inf. Theory, 49 (10), pp. 2636-2647. , Oct; Wishart, J.B., (1928), 20 A, pp. 32-52; Wilks, S.M., (1963) Mathematical Statistics, , Hoboken, NJ: Wiley; Edelman, A., (1989) Eigenvalues and Condition Numbers of Random Matrices, , Ph. D. dissertation, Dept. Math., Massachusetts Inst. Technol., Cambridge, MA; Mehta, M.L., (2004) Random Matrices, , New York: Academic; Pandey, A., Ghosh, S., Skew-orthogonal polynomials and universality of energy-level correlations (2001) Phys. Rev. Lett., 87 (2), p. 02410214. , Jun; Ghosh, S., Pandey, A., Skew-orthogonal polynomials and randommatrix ensembles (2002) Phys. Rev. E, 65 (1-21), p. 046221. , Apr; Dyson, F.J., Distribution of eigenvalues for a class of real symmetric matrices (1971) Rev. Mex. Fis., 20, pp. 231-237; Brody, T.A., Flores, J., French, J.B., Mello, P.A., Pandey, A., Wong, S.S.M., Random-matrix physics: Spectrum and strength fluctuations (1981) Rev. Mod. Phys., 53 (3), pp. 385-479; Kumar, S., Pandey, A., Universal spectral correlations in orthogonal-unitary and symplectic-unitary crossover ensembles of random matrices (2009) Phys. Rev. E, 79, p. 02621114. , Feb; Kumar, S., Pandey, A., Jacobi crossover ensembles of random matrices and statistics of transmission eigenvalues (2010) J. Math. Phys. A: Math. Theor., 43 (1-22), p. 085001. , Feb; Pandey, A., Brownian motion model of discrete spectra (1995) Chaos, Solitons, Fractals, 5 (7), pp. 1275-1285. , Jul; Marčenko, V.A., Pastur, L.A., Distribution of eigenvalues for some set of random matrices (1967) Math. USSR-Sbornik, 1, pp. 457-483; Bai, Z.D., Methodologies in spectral analysis of large dimensional random matrices (1999) Statist. Sinica, 9, pp. 611-677; Risken, H., (1989) The Fokker-Planck Equation: Methods of Solutions and Applications, , 2nd ed. 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IEEE Transactions on Information Theory

Random matrix model for nakagamihoyt fading

Flash lamp annealing induced rapid melting of a near surface Ge enriched Si wafer and the subsequent formation of SiGe layers were demonstrated. The formation of an undesirable facetted liquid/solid interface, well known for pulse melting in the millisecond time regime, was found to decrease significantly due to the increasing melting temperature of Si with reducing Ge concentration at the SiGe/Si interface. A dislocation network and the existence of strain, which were evidenced by transmission electron microscopy and μ-Raman measurements, respectively, are expected to play an important role to form thin SiGe layers. © 2010 Elsevier B.V. All rights reserved.

Current Applied Physics

Subsecond melt processing for achieving SiGe layers

We report on effects of Fe implantation dopinginduced changes in structural, optical, morphological, and vibrational properties of cadmium sulfide thin films. Films were implanted with 90 keV Fe+ ions at room temperature for a wide range of fluences from 0.1 × 1016 to 3.6 × 1016 ions cm-2 (corresponding to 0.38-12.03 at.% of Fe). Glancing angle X-ray diffraction analysis revealed that the implanted Fe atoms tend to supersaturate by occupying the substitutional cationic sites rather than forming metallic clusters or secondary phase precipitates. In addition, Fe doping does not lead to any structural phase transformation although it induces structural disorder and lattice contraction. Optical absorption studies show a reduction in the optical band gap from 2.39 to 2.17 eV with increasing Fe concentration. This is attributed to disorder-induced band tailing in semiconductors and ion-beam-induced grain growth. The strain associated with a lattice contraction is deduced from micro-Raman scattering measurements and is found that size and shape fluctuations of grains, at higher fluences, give rise to inhomogeneity in strain. © Springer-Verlag 2010.

Applied Physics A: Materials Science and Processing

Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films

The furnace and flash-lamp annealing (FLA) temperature dependent variation in the room temperature 1.53 μm Er photoluminescence (PL) from Er-doped Ge-rich SiO2 layers is investigated. The appearance of the 1.53 μm Er PL is discussed in the framework of the phonon-assisted fluorescent resonant energy transfer from Ge-related luminescence-centers (LCs) to the Er 3+. Detailed analyses suggest that in case of FLA the decrease in the 1.53 μm Er PL intensity is governed by the temperature dependent recrystallization of Ge nanoclusters, while for furnace-annealing it is associated with the reduction in the LC- Er3+ coupling due to Ge out-diffusion and the formation of Er-rich clusters with increasing temperature. © 2010 American Institute of Physics.