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Shiv Nadar University

The speed of operation of a reverse biased pn junction is evaluated using a streak camera. As such, power requirement for optical interconnects is calculated using the experimental value of quantum efficiency. It is shown from the results of the experiments that Si-based diodes are capable of operating in minimum of 10's of GHz and that is requires power less than conventional global metal interconnects on an IC.

Electrical Engineering

(SoE) School of Engineering

World University root node

Proceedings of SPIE - The International Society for Optical Engineering

High speed CMOS - Si light emitters for on-chip optical interconnect

Barriers to the industrial implementation of optical interconnects on an IC, center around the fabrication of optical elements on wafers through conventional Si processes. This paper focuses on demonstrating an all Si-based optical interconnect system that can be easily integrated into a conventional Si process. Most other approaches for optical interconnects use emitters that require drastic changes in conventional fabrication process. In this work, we demonstrate the ability to transmit electrical signals using Si-based system i.e. the light was generated by biasing the Si LED at avalanche breakdown voltage, light was coupled through a fiber cable made of SiO2 and inserted into a Si based avalanche photo-diode. Results presented demonstrate the switching behavior of Si LED in the GHz range, transmission of signal across the fiber, and measurement of signal limited by the BW of the receiver amplifier. © 2000 IEEE.

Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001

All Si-based optical interconnect for signal transmission

Silicon p-n junction biased in avalanche breakdown emit visible light and its integration offer the potential for VLSI-compatible optical interconnect systems enabling next generation technologies and/or contact-less functional testing. The Si light emitters were stressed with AC, DC excitation and increased temperature to accelerate the aging. The results clearly show that the effects of AC, temperature stressing are negligible on light emission. DC stressing results in light coalescence for low values of current (less than 25mA) with total light emission coming out of the junction remaining constant. However, for DC stressing with large current (larger than 40mA) there is no significant variation of light emission. Changes in the light emission behavior for large and small values of DC excitations are consistent with a hydrogen migration model. The study revealed a strong dependence of light emission on the layout of test devices.

Annual Proceedings - Reliability Physics (Symposium)

Accelerated stressing and degradation mechanisms for Si-based photo-emitters

A silicon p-n junction biased in avalanche breakdown emits visible light and its integration offers the potential for VLSI-compatible optical interconnect systems, enabling next generation technologies and/or contact-less functional testing. The Si light emitters were stressed with AC and DC excitation and increased temperature to accelerate the aging. The results clearly show that the effects of AC and temperature stressing are negligible on light emission. DC stressing results in light coalescence for low values of current (<25 mA) with total light emission from the junction remaining constant. However, for DC stressing with large current (>40 mA), there is no significant variation of light emission. Changes in the light emission behavior for large and small values of DC excitation are consistent with a hydrogen migration model. The study revealed a strong dependence of light emission on the layout of test devices. © 2001 IEEE.

IEEE International Reliability Physics Symposium Proceedings

We reconsider the mode of operation of a Marx bank circuit and analyze the secondary breakdown of transistors with shorted emitter-base. The mechanism of breakdown of the transistor when a fast rising voltage pulse is applied across is investigated. The device exhibits chaotic behavior at the breakdown point where it can go into two possible modes of breakdown. A new explanation for the working of the circuit consistent with the experimental observations is proposed.

Solid-State Electronics

Breakdown of transistors in Marx bank circuit

The principle of operation of the transistor-based Marx bank circuit has been examined. It was experimentally observed that stage-wise increase of reverse voltage does not occur. This cannot be explained by the principle of operation understood so far. A new explanation, consistent with the experimental observations and associating current-mode second breakdown of transistors, is proposed. A few experimental observations made by earlier workers have also been justified in light of the new current-controlled mechanism. © 1998 American Institute of Physics.