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Articles
Parasitic effects in multi-gate MOSFETsPublished in The Institute of Electronics, Information and Communication Engineers
2007
Volume: 90
Issue: 10
Pages: 2051 - 2056
Content may be subject to copyright.
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Published in The Institute of Electronics, Information and Communication Engineers
Open Access
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Venkatnarayanan Hariharan- Parasitic effects depending on shape of spacer region on FinFETs
- Drain current model including velocity saturation for symmetric double-gate MOSFETs
- A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs
- An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs
