Get all the updates for this publication
Articles
Open Access
Parasitic effects depending on shape of spacer region on FinFETsOpen AccessPublished in IOP Publishing
2007
DOI: 10.1149/1.2728844
Volume: 6
Issue: 4
Topics: Parasitic element (65)%65% related to the paper, Parasitic capacitance (59)%59% related to the paper and Capacitance (56)%56% related to the paper
View more info for "Parasitic effects depending on shape of spacer region on FinFETs"
Content may be subject to copyright.
About the journal
Published in IOP Publishing
Open Access
yesImpact factor
N/AAuthors (1)
Venkatnarayanan Hariharan- Parasitic effects depending on shape of spacer region on FinFETs
- Drain current model including velocity saturation for symmetric double-gate MOSFETs
- A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs
- An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs
