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Drain current model including velocity saturation for symmetric double-gate MOSFETsOpen AccessPublished in IEEE
2008
Volume: 55
Issue: 8
Pages: 2173 - 2180
Topics: Velocity saturation (62)%62% related to the paper and Subthreshold conduction (56)%56% related to the paper
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Published in IEEE
Open Access
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Venkatnarayanan Hariharan- Parasitic effects depending on shape of spacer region on FinFETs
- Drain current model including velocity saturation for symmetric double-gate MOSFETs
- A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs
- An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs
