Get all the updates for this publication
Proceedings Article
Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n= 2Published in
2007
Pages: 1 - 2
Topics: Velocity saturation (59)%59% related to the paper, Threshold voltage (52)%52% related to the paper and Field-effect transistor (50)%50% related to the paper
View more info for "Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2"
Content may be subject to copyright.
About the journal
Published in
Open Access
Impact factor
N/AAuthors (1)
Venkatnarayanan Hariharan- Parasitic effects depending on shape of spacer region on FinFETs
- Drain current model including velocity saturation for symmetric double-gate MOSFETs
- A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs
- An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs
