Get all the updates for this publication
Proceedings Article
Closed form current and conductance model for symmetric double-gate MOSFETs using field-dependent mobility and body dopingPublished in
2008
Content may be subject to copyright.
About the journal
Published in
Open Access
noImpact factor
N/AAuthors (1)
Venkatnarayanan Hariharan- Parasitic effects depending on shape of spacer region on FinFETs
- Drain current model including velocity saturation for symmetric double-gate MOSFETs
- A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs
- An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs
