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An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETsOpen AccessPublished in IEEE
2009
Volume: 56
Issue: 3
Pages: 529 - 532
Topics: Approximation error (60)%60% related to the paper, Transcendental equation (54)%54% related to the paper and Robustness (computer science) (52)%52% related to the paper
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Published in IEEE
Open Access
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Venkatnarayanan Hariharan- Parasitic effects depending on shape of spacer region on FinFETs
- Drain current model including velocity saturation for symmetric double-gate MOSFETs
- A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs
- An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs
