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A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs
Venkatnarayanan Hariharan
,
Juzer Vasi
,
V Rao Ramgopal
Published in Elsevier
2009
DOI:
10.1016/j.sse.2008.11.006
Volume: 53
Issue: 2
Pages: 218 - 224
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Authors (1)
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Published in Elsevier
Open Access
yes
Impact factor
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Authors (1)
Venkatnarayanan Hariharan
Electrical Engineering
(SoE) School of Engineering
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