Header menu link for other important links
Temporal evolution of nanoporous layer in off-normally ion irradiated GaSb
Datta D.P., , Garg S.K., Sahoo P.K., Kanjilal D., Som T.
Published in American Institute of Physics Inc.
Volume: 115
Issue: 12
Room temperature irradiation of GaSb by 60keV Ar+-ions at an oblique incidence of 60° leads to simultaneous formation of a nanoporous layer and undulations at the interface with the underlying substrate. Interestingly, with increasing ion fluence, a gradual embedding of the dense nanoporous layer takes place below ridge-like structures (up to the fluence of 1×1017 ions cm-2), which get extended to form a continuous layer (at fluences ×1017 ions cm-2). Systematic compositional analyses reveal the co-existence of Ga 2O3 and Sb2O3 in the surface layer. The results are discussed in terms of a competition between ion-induced defect accumulation and re-deposition of sputtered atoms on the surface. © 2014 AIP Publishing LLC.
About the journal
Published in American Institute of Physics Inc.
Open Access
Impact factor