Electroluminescence in SiO2 layers can be created by Ge implantation and a subsequent heat treatment, leading to the formation of Ge nano-particles inside the SiO2. An additional implantation of Er, connected with a further annealing, can lead to an improvement of the luminescent properties. However, the intensity of electroluminescence was found to decrease drastically after exceeding an optimum concentration of the Er doping. Slow positron implantation spectroscopy (SPIS), both in single (DB) and coincidence (CDB) Doppler broadening mode, was applied to probe processes at a microscopic level which might have an impact on the optical response. It shows that the increasing intensity of the electro-luminescence is connected with a crystalline structure of the SiO2 covering the nano-particles and also with the improved reverse energy transfer process between Er and Ge.