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Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxyPublished in American Institute of Physics Inc.
2003
DOI: 10.1063/1.1555709
Volume: 82
Issue: 8
Pages: 1212 - 1214
Topics: Molecular beam epitaxy (58)%58% related to the paper, Nanodot (57)%57% related to the paper, Rapid thermal processing (54)%54% related to the paper, Germanium (53)%53% related to the paper and Wafer (52)%52% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy. Applied Physics Letters 82, 8 p1212-1214 (2003)] and may be found at https://doi.org/10.1063/1.1555709.
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