We discuss the distribution of size and aerial density of Ge nanocrystals in a metal-oxide-semiconductor (MOS) memory structure fabricated by molecular beam epitaxy combined with rapid thermal processing; the size and aerial density of Ge nanocrystals are controlled by varying the thickness of the deposited Ge layer and the processing time. Variation of tunnel oxide thickness is demonstrated with the extension of the processing time. The effect of processing time and tunnel oxide thickness on the electrical properties of the MOS structures is investigated by high frequency capacitance-voltage measurements. © Springer-Verlag 2004.

Aloke Kanjilal

Physics

(SoNS) School of Natural Sciences

J.L. Hansen

P. Gaiduk

A.N. Larsen

P. Normand

P. Dimitrakis

D. Tsoukalas

N. Cherkashin

A. Claverie

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Shiv Nadar University

Applied Physics A: Materials Science and Processing

Size and aerial density distributions of Ge nanocrystals in a SiO 2 layer produced by molecular beam epitaxy and rapid thermal processing