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Self-organized titanium oxide nano-channels for resistive memory applicationPublished in American Institute of Physics Inc.
2015
DOI: 10.1063/1.4936961
Volume: 118
Issue: 22
Towards developing next generation scalable TiO2-based resistive switching (RS) memory devices, the efficacy of 50 keV Ar+-ion irradiation to achieve self-organized nano-channel based structures at a threshold fluence of 5 × 1016 ions/cm2 at ambient temperature is presented. Although x-ray diffraction results suggest the amorphization of as-grown TiO2 layers, detailed transmission electron microscopy study reveals fluence-dependent evolution of voids and eventual formation of self-organized nano-channels between them. Moreover, gradual increase of TiO/Ti2O3 in the near surface region, as monitored by x-ray photoelectron spectroscopy, establishes the upsurge in oxygen deficient centers. The impact of structural and chemical modification on local RS behavior has also been investigated by current-voltage measurements in conductive atomic force microscopy, while memory application is manifested by fabricating Pt/TiO2/Pt/Ti/SiO2/Si devices. Finally, the underlying mechanism of our experimental results has been analyzed and discussed in the light of oxygen vacancy migration through nano-channels. © 2015 AIP Publishing LLC.
Topics: Conductive atomic force microscopy (56)%56% related to the paper and Resistive random-access memory (54)%54% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Self-organized titanium oxide nano-channels for resistive memory application. Journal of Applied Physics 118, 22 p224903 (2015)] and may be found at https://doi.org/10.1063/1.4936961.
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