In this abstract, the impact of the gate and substrate biasing on the 3D current crowding behavior in the drain extended devices has been correlated with the shape of the NWell. Role of am-bipolar current flow in an optimized device structure for designing an efficient ESD protection device has been discussed by utilizing the self ballasting mechanisms under high current injection. © 2012 IEEE.

Amitabh Chatterjee

Electrical Engineering

(SoE) School of Engineering

C. Duvvury

F. Brewer

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