Room temperature transformation from anatase (A-TiO2) to rutile (R-TiO2) thin films through an intermediate mixed phase on stainless steel driven by a controlled oxygen flow rate (OFR) is investigated. Such OFR dependent phase transition is confirmed by X-ray diffraction and also consistent with X-ray absorption spectroscopy at Ti L and O K-edges, showing a long range ordering in TiO6 octahedral symmetry. X-ray photoelectron spectroscopy reveals a gradual reduction in Ti2O3 and/or TiO intermediate phases with increasing OFR. Finally, an enhanced photocatalytic activity is observed in the mixed phase and discussed in terms of photo-generated charge transport in the type-II staggered band structure between A-TiO2 and R-TiO2 phases. © 2018 Author(s).

Aloke Kanjilal

Physics

(SoNS) School of Natural Sciences

Banerjee D.

Barman A.

Deshmukh S.

Saini C.P.

Maity G.

Pradhan S.K.

Gupta M.

Phase D.M.

Roy S.S.

Fulltext

<p>Shiv Nadar University is a comprehensive, multidisciplinary, research-focused, and student-centric University offering a full range of academic programs at the undergraduate, postgraduate and doctoral level. With state-of-the-art infrastructure, the University comprises of academic wings, sophisticated labs, international standard sports facilities, amphitheaters, auditorium, conference rooms and smart classrooms. The University&rsquo;s goal is to become internationally recognized for the quality of its research and creative endeavors and their applicability to improving quality of life, generating new insights and expanding the boundaries of human knowledge creativity. Committed to excellence in teaching, research and service, the University aims to serve the higher education needs of India and the world beyond.</p>

Shiv Nadar University

Oxygen mediated phase transformation in room temperature grown TiO2 thin films with enhanced photocatalytic activity

Applied Physics Letters

Transformation of self-assembled crystalline TiO2 nanorods to amorphous layer, and the corresponding impact on optical-bandgap (Eg) on Si pyramids are investigated by irradiating with 50 keV Ar+-ions. Initially, Eg is found to be reduced from 3.23 to 2.94 eV up to a fluence of 1 × 1016 ions/cm2, and discussed in terms of the rise in oxygen vacancies (VO). However, a sudden increase in Eg to 3.38 eV is detected at a fluence of 1 × 1017 ions/cm2 through evolution of voids by over-saturating VO, manifesting the appearance of degenerate states by shifting the Fermi level above the conduction band minimum via Burstein-Moss effect. © 2016 AIP Publishing LLC.

Defect-engineered optical bandgap in self-assembled TiO2 nanorods on Si pyramids

Nature Materials

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

The Journal of Physical Chemistry C

Structure and Reactivity of a Model Oxide Supported Silver Nanocluster Catalyst Studied by Near Ambient Pressure X-ray Photoelectron Spectroscopy

The Journal of Physical Chemistry Letters

Evaluation of Surface State Mediated Charge Recombination in Anatase and Rutile TiO2

Photoelectrochemical Determination of Shallow and Deep Trap States of Platinum-Decorated TiO2Nanotube Arrays for Photocatalytic Applications