This abstract reports the realization of p-type conduction in Sb (5 at.%): Mg0.10Zn0.90O (SMZO) grown in different growth ambient and then fabrication of SMZO/n-Si based UV heterojunction photodetector grown by dual ion beam sputtering (DIBS) system. The fabricated photodetectors were then probed for the effect of growth ambient using current–voltage (I–V) and photoresponse measurement on photodetector properties. © Springer Nature Switzerland AG 2019.

Rohit Singh

Electrical Engineering

(SoE) School of Engineering

R. Bhardwaj

P. Sharma

M.A. Khan

S. Mukherjee

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Shiv Nadar University

MgZnO Based UV Heterojunction Photodetector Fabricated Using Dual Ion Beam Sputtering

Springer Proceedings in Physics

Mgzno based uv heterojunction photodetector fabricated using dual ion beam sputtering