A little explored relationship between the structural and electrical properties of radio frequency sputtered AlN films is studied as a function of nitrogen concentration. It is found that the grain growth mechanism is responsible for an improvement of structural properties and a degradation of electrical properties. © 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Suneet Tuli

Electrical Engineering

(SoE) School of Engineering

J.P. Kar

G. Bose

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