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Influence of nitrogen concentration on grain growth, structural and electrical properties of sputtered aluminum nitride films
J.P. Kar, G. Bose,
Published in
Volume: 54
Issue: 10
Pages: 1755 - 1759
A little explored relationship between the structural and electrical properties of radio frequency sputtered AlN films is studied as a function of nitrogen concentration. It is found that the grain growth mechanism is responsible for an improvement of structural properties and a degradation of electrical properties. © 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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