Drain Extended (DE-NMOS) ESD protection devices exhibit low ESD performance due to poor bipolar action. The purpose of this work is to investigate the role of surface bipolar phenomenon in 90nm DE-NMOS, which triggers failure due to bipolar turn-on, and next study the impact of adding source/drain resistors on their ESD robustness.

Amitabh Chatterjee

Electrical Engineering

(SoE) School of Engineering

S. Pendharkar

H. Gossner

C. Duvvury

F. Brewer

<p>Shiv Nadar University is a comprehensive, multidisciplinary, research-focused, and student-centric University offering a full range of academic programs at the undergraduate, postgraduate and doctoral level. With state-of-the-art infrastructure, the University comprises of academic wings, sophisticated labs, international standard sports facilities, amphitheaters, auditorium, conference rooms and smart classrooms. The University&rsquo;s goal is to become internationally recognized for the quality of its research and creative endeavors and their applicability to improving quality of life, generating new insights and expanding the boundaries of human knowledge creativity. Committed to excellence in teaching, research and service, the University aims to serve the higher education needs of India and the world beyond.</p>

Shiv Nadar University

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Improving surface bipolar activity in thin gate oxide DE-NMOS - A critical HV I/O protection element for nano-meter scale technologies