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Improving surface bipolar activity in thin gate oxide DE-NMOS - A critical HV I/O protection element for nano-meter scale technologies
, S. Pendharkar, H. Gossner, C. Duvvury, F. Brewer
Published in
Pages: 307 - 310
Drain Extended (DE-NMOS) ESD protection devices exhibit low ESD performance due to poor bipolar action. The purpose of this work is to investigate the role of surface bipolar phenomenon in 90nm DE-NMOS, which triggers failure due to bipolar turn-on, and next study the impact of adding source/drain resistors on their ESD robustness.
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