Chemically textured Si with improved absorption in the complete range of solar spectrum is investigated by ultraviolet/visible/near-infrared (UV/Vis/NIR) spectroscopy, showing an average specular reflectance of ∼0.4\% in the wavelength of 500-3000nm. The pyramidal structures on such solar-blind Si can reduce the reflectance further below 0.1\% in the UV region by conformal growth of granular Al-doped ZnO (AZO) films. X-ray diffraction analyses suggest the growth of polycrystalline AZO on faceted-Si. Moreover, marginal increase in electrical conductivity of AZO is found on textured surfaces, whereas rise in leakage current in Schottky-like Ag/AZO/Si/Ag heterostructure devices is noticed with increasing Si surface area. © 2014 AIP Publishing LLC.

Aloke Kanjilal

Physics

(SoNS) School of Natural Sciences

Saini C.P.

Barman A.

Kumar M.

Sahoo P.K.

Som T.

Fulltext

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Shiv Nadar University

Improved broadband antireflection in Schottky-like junction of conformal Al-doped ZnO layer on chemically textured Si surfaces

Applied Physics Letters

Simultaneous superhydrophobic and visible range antireflective properties are demonstrated in hydrothermally grown ZnO nanorods (NRs) on chemically textured Si surfaces. A drastic transformation of Si micro-pyramids from hydrophobic to superhydrophobic is observed by securing the formation of polycrystalline ZnO NRs at surfaces, showing an increment of apparent contact angle from ∼102° to ∼157° and further explained in the light of a decrease in solid fractional surface area, according to the Cassie-Baxter model. Moreover, wurtzite phase of ZnO NRs is confirmed by the X-ray diffraction and Raman analysis. Such hierarchical structures further exhibit a large visible range antireflection (∼5\%), and correlated it to the variation in aspect ratio of Si pyramids in conjunction with the formation of graded refractive index. The combined superhydrophobic and large antireflection phenomena in the present dual-scale structures is believed to be useful for Si-based photovoltaic applications. © 2019 IOP Publishing Ltd.

Materials Research Express

Tailoring superhydrophobic ZnO nanorods on Si pyramids with enhanced visible range antireflection property

Oxygen vacancy (OV) controlled hydrophobicity of self-assembled TiO2 nanorods (NRs) on chemically etched Si pyramids is investigated by irradiating with 50 keV Ar+-ions at room temperature. Apparent contact angle (CA) is found to increase from 122° to 141° up to a fluence of 1 × 1015 ions/cm2, followed by a gradual reduction to 130° at 1 × 1017 ions/cm2. However, the drop in apparent CA is found to be associated with the decrease in fractional surface area via transformation of NRs to an amorphous layer above 1 × 1015 ions/cm2, though it is still higher than that of as-grown one. Detailed X-ray photoelectron spectroscopy and electron paramagnetic resonance measurements suggest that the control of hydrophobic behavior is related to the suppression of surface free energy via migration of OVs into the voids in TiOx layers. © 2016 American Chemical Society.

Journal of Physical Chemistry C

Role of oxygen vacancy on the hydrophobic behavior of TiO2 nanorods on chemically etched Si pyramids

Temperature-dependent photoluminescence (PL) of titanium oxide (TiO2) shows an evolution of blue emission when exposed to 50 keV Ar+ ions. The origin of observed PL has been examined by X-ray absorption near-edge spectroscopy (XANES) at Ti-K,L and O-K edges, revealing the reduction of ligand field splitting owing to the formation of oxygen vacancies (OVs) by destroying TiO6 octahedral symmetry. Detailed PL and XANES analyses suggest that the fluence (ions/cm2) dependent increase in OVs not only boosts the conduction electrons but also increases the density of holes in localized self-trapped exciton (STE) states near the valence band. Based on these observations, we propose a model in which doped conduction electrons are recombining radiatively with the holes in STE states for blue light emission. © 2017 American Chemical Society.

Impact of Self-Trapped Excitons on Blue Photoluminescence in TiO2 Nanorods on Chemically Etched Si Pyramids

Transformation of self-assembled crystalline TiO2 nanorods to amorphous layer, and the corresponding impact on optical-bandgap (Eg) on Si pyramids are investigated by irradiating with 50 keV Ar+-ions. Initially, Eg is found to be reduced from 3.23 to 2.94 eV up to a fluence of 1 × 1016 ions/cm2, and discussed in terms of the rise in oxygen vacancies (VO). However, a sudden increase in Eg to 3.38 eV is detected at a fluence of 1 × 1017 ions/cm2 through evolution of voids by over-saturating VO, manifesting the appearance of degenerate states by shifting the Fermi level above the conduction band minimum via Burstein-Moss effect. © 2016 AIP Publishing LLC.

Defect-engineered optical bandgap in self-assembled TiO2 nanorods on Si pyramids

Post-deposition annealing mediated evolution of self-decorated Au nanoparticles (NPs) on chemically etched Si pyramids is presented. A distinct transformation of Si surfaces from hydrophilic to hydrophobic is initially found after chemical texturing, showing an increase in contact angle (CA) from 58°to 98°(±1°). Further improvement of hydrophobicity with CA up to ∼118°has been established after annealing a 10 nm thick Au-coated Si pyramids at 400°C that led to the formation of Au NPs on Si facets along with self-ordering at the pyramid edges. Detailed x-ray diffraction studies suggest the evolution of crystalline Au NPs on strained Si facets. Microstructural studies, however, indicate no mixing of Au and Si atoms at the Au/Si interfaces, instead of forming Au nanocrystals at 400°C. The improved hydrophobicity of Si pyramids, even with Au NPs can be explained in the light of a decrease in solid fractional surface area according to Wenzel's model. Moreover, a sharp drop in specular reflectance from Si pyramids in the range of 300-800 nm, especially in the ultraviolet region up to ∼0.4\% is recorded in the presence of Au NPs by ultraviolet-visible spectroscopy, reflecting the possible use in photovoltaic devices with improved antireflection property. © 2016 AIP Publishing LLC.

Journal of Applied Physics

Self-decorated Au nanoparticles on antireflective Si pyramids with improved hydrophobicity

Photon harvesting by reducing reflection loss is the basis of photovoltaic devices. Here, we show the efficacy of Al-doped ZnO (AZO) overlayer on ion beam-synthesized nanofaceted silicon for suppressing reflection loss. In particular, we demonstrate thickness-dependent tunable antireflection (AR) from conformally grown AZO layer, showing a systematic shift in the reflection minima from ultraviolet to visible to near-infrared ranges with increasing thickness. Tunable AR property is understood in light of depth-dependent refractive index of nanofaceted silicon and AZO overlayer. This improved AR property significantly increases the fill factor of such textured heterostructures, which reaches its maximum for 60-nm AZO compared to the ones based on planar silicon. This thickness matches with the one that shows the maximum reduction in surface reflectance. PACS: 81.07.-b; 42.79.Wc; 81.16.Rf; 81.15.Cd © 2014, Basu et al.; licensee Springer.

Nanoscale Research Letters

Tunable antireflection from conformal Al-doped ZnO films on nanofaceted Si templates

We report on room temperature diode characteristics of ZnO:Al (AZO)/Si heterostructures by current-voltage measurements. In this study, with increasing AZO film thickness, systematic reduction in the turn-on potential (from 3.16 to 1.80 V) and the film stress are observed. Complementary capacitance-voltage studies reveal a decreasing trend in barrier height at the junction with increasing AZO film thickness. A gradual decrease in resistivity takes place with increasing AZO film thickness. Above observations are explained in the framework of AZO thickness dependent variation in grain size and in turn trap density at the grain boundaries influencing carrier transport across the adjacent grains. © 2013 © 2013 Author(s).