NBTI degradation of FinFET devices is stochastic due to the inevitable variations in manufacturing processes. The stochastic behavior of NBTI degradation is modeled with different ΔVTH distributions. Various leading semiconductor industries report different ΔVTH distributions like Gamma, Normal, and Dispersive Skellam (DS) to model the NBTI induced variability. In this work, different NBTI induced variability models from the literature are used to investigate the impact on circuit performance. The combined effect of time-zero and various NBTI induced variability distributions on SRAM read and write metrics is discussed in detail. NBTI degradation in SRAM depends on the stored data pattern. Hence, we also report the impact of stored data patterns on the SRAM metric. To further analyze the impact of ΔVTH distributions on SRAM metrics, the correlation between SRAM metrics is studied. © 2021 Elsevier B.V.