In this work, we investigate the effect of back-gate voltage on sensing metric of Dielectric Modulated (DM) Tunnel Field Effect Transistor (TFET) biosensor. Under this work we have investigated transfer characteristics, the variation of energy band, and hole concentration with back gate voltage and calculated the drain current sensitivity and selectivity for three different value of back-gate voltage. In this work, we have shown that with positive back gate voltage, drain current sensitivity is improved by nearly one order of magnitude and selectivity value is also enhanced by more than 2 times. © 2020 IEEE.

Rohit Singh

Electrical Engineering

(SoE) School of Engineering

Dwivedi P.

Kumar A.

Sengar B.S.

Garg V.

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Shiv Nadar University

Impact of back-gate voltage on sensing metric of dielectric modulated Tunnel FET biosensor

2020 International Conference on Emerging Frontiers in Electrical and Electronic Technologies, ICEFEET 2020

IEEE Sensors Journal

Overcoming Biomolecule Location-Dependent Sensitivity Degradation Through Point and Line Tunneling in Dielectric Modulated Biosensors

IEEE Transactions on Nanotechnology

Comparative Analysis of Dielectric-Modulated FET and TFET-Based Biosensor

Nanotechnology

Enhanced sensitivity of double gate junctionless transistor architecture for biosensing applications

In this paper, a short-gate tunneling-field-effect-transistor (SG-TFET) structure has been investigated for the dielectrically modulated biosensing applications in comparison with a full-gate tunneling-field-effect-transistor structure of similar dimensions. This paper explores the underlying physics of these architectures and estimates their comparative sensing performance. The sensing performance has been evaluated for both the charged and charge-neutral biomolecules using extensive device-level simulation, and the effects of the biomolecule dielectric constant and charge density are also studied. In SG-TFET architecture, the reduction of the gate length enhances its drain control over the band-to-band tunneling process and this has been exploited for the detection, resulting to superior drain current sensitivity for biomolecule conjugation. The gate and drain biasing conditions show dominant impact on the sensitivity enhancement in the short-gate biosensors. Therefore, the gate and drain bias are identified as the effective design parameters for the efficiency optimization. © 2015 IEEE.

IEEE Transactions on Electron Devices

Comparative performance analysis of the dielectrically modulated full- gate and short-gate tunnel FET-based biosensors

IEEE Electron Device Letters

Dielectric-Modulated Impact-Ionization MOS Transistor as a Label-Free Biosensor