GaSb(1 0 0) samples were irradiated with 60 keV Ar + -ions at normal incidence for fluences in the range of 7 × 10 16 to 3 × 10 18 ions cm -2 at room temperature, showing gradual evolution of a porous surface layer containing interconnected nanofibers. In particular, fluence dependent formation of patches on the nanoporous layer is observed by scanning electron microscopy. Combined results of grazing incidence x-ray diffraction and transmission electron microscopy reveal the presence of nanocrystallites in the porous structures. Compositional analysis by x-ray photoelectron spectroscopy indicates the development of oxide phases, mainly Ga 2 O 3 and Sb 2 O 3 where the former increases with fluence. We have proposed a model addressing a competition between ion-induced-defect driven growth of the nanoporous layer and redeposition of sputtered target atoms on the growing layer. © 2014 Elsevier B.V.

Aloke Kanjilal

Physics

(SoNS) School of Natural Sciences

Datta D.P.

Garg S.K.

Sahoo P.K.

Satpati B.

Kanjilal D.

Som T.

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Shiv Nadar University

Applied Surface Science

Room temperature irradiation of InSb(111) by 60keV Ar+-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1×1017 to 3×1018 ions cm-2. While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In2O3 and Sb2O3 phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb. © 2014 AIP Publishing LLC.

Fulltext

Journal of Applied Physics

60 keV Ar+-ion induced modification of microstructural, compositional, and vibrational properties of InSb

Room temperature implantation of 60 keV Ar+-ions in GaSb to the fluences of 7 × 1016 to 3 × 1018 ions cm -2 is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb. © 2014 AIP Publishing LLC.

Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

Room temperature irradiation of GaSb by 60keV Ar+-ions at an oblique incidence of 60° leads to simultaneous formation of a nanoporous layer and undulations at the interface with the underlying substrate. Interestingly, with increasing ion fluence, a gradual embedding of the dense nanoporous layer takes place below ridge-like structures (up to the fluence of 1×1017 ions cm-2), which get extended to form a continuous layer (at fluences ×1017 ions cm-2). Systematic compositional analyses reveal the co-existence of Ga 2O3 and Sb2O3 in the surface layer. The results are discussed in terms of a competition between ion-induced defect accumulation and re-deposition of sputtered atoms on the surface. © 2014 AIP Publishing LLC.

Temporal evolution of nanoporous layer in off-normally ion irradiated GaSb

The effects of the initial stages of native-oxide formation on the surface properties of GaSb (001)

Applied Physics Letters

Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces

Thin Solid Films

Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

Treatment for GaSb surfaces using a sulphur blended (NH4)2S/(NH4)2SO4 solution

Evolution of porous network in GaSb under normally incident 60 keV Ar + -ion irradiation