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Evolution of porous network in GaSb under normally incident 60 keV Ar + -ion irradiation
Datta D.P., , Garg S.K., Sahoo P.K., Satpati B., Kanjilal D., Som T.
Published in Elsevier B.V.
Volume: 310
Pages: 189 - 195
GaSb(1 0 0) samples were irradiated with 60 keV Ar + -ions at normal incidence for fluences in the range of 7 × 10 16 to 3 × 10 18 ions cm -2 at room temperature, showing gradual evolution of a porous surface layer containing interconnected nanofibers. In particular, fluence dependent formation of patches on the nanoporous layer is observed by scanning electron microscopy. Combined results of grazing incidence x-ray diffraction and transmission electron microscopy reveal the presence of nanocrystallites in the porous structures. Compositional analysis by x-ray photoelectron spectroscopy indicates the development of oxide phases, mainly Ga 2 O 3 and Sb 2 O 3 where the former increases with fluence. We have proposed a model addressing a competition between ion-induced-defect driven growth of the nanoporous layer and redeposition of sputtered target atoms on the growing layer. © 2014 Elsevier B.V.
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Published in Elsevier B.V.
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