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Effect of grain-boundaries on electrical properties of n-ZnO:Al/p-Si heterojunction diodes
Kumar M., , Som T.
Published in American Institute of Physics Inc.
2013
Volume: 3
   
Issue: 9
Abstract
We report on room temperature diode characteristics of ZnO:Al (AZO)/Si heterostructures by current-voltage measurements. In this study, with increasing AZO film thickness, systematic reduction in the turn-on potential (from 3.16 to 1.80 V) and the film stress are observed. Complementary capacitance-voltage studies reveal a decreasing trend in barrier height at the junction with increasing AZO film thickness. A gradual decrease in resistivity takes place with increasing AZO film thickness. Above observations are explained in the framework of AZO thickness dependent variation in grain size and in turn trap density at the grain boundaries influencing carrier transport across the adjacent grains. © 2013 © 2013 Author(s).
Figures & Tables (7)
  • Figure-0
    FIG. 1. AFM micrographs (1μm × 1μm) of AZO films deposited ... Expand
  • Figure-1
    TABLE I. Following parameters were determined for the AZO/Si ... Expand
  • Figure-2
    FIG. 2. (a) Plan-view and (b) cross-sectional SEM images ... Expand
  • Figure-3
    FIG. 4. Variation in resistivity with AZO film thickness. Inset ... Expand
  • Figure-4
    FIG. 3. Thickness-dependent XRD patterns. For a better ... Expand
  • Figure-5
    FIG. 5. (a) Thickness dependent nonlinear I-V characteristics ... Expand
  • Figure-6
    FIG. 6. Typical 1/C2-V characteristics for S1 and S3, where ... Expand
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Published in American Institute of Physics Inc.
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