Get all the updates for this publication
Conferences
Effect of applied bias on Schottky interface to affect resistive switching in a memristive devicePublished in Institute of Electrical and Electronics Engineers Inc.
2020
Resistive Random Access Memories (RRAMs) or Memristor has been a revolution in current nonvolatile memory technology. This work demonstrates an analytical model that shows the effect of applied bias on the metal-semiconductor interface to affect resistive switching of an RRAM device. The applied bias modulates the corresponding interface in terms of various interfacial electrical parameters. Besides, the change in bias affects the distribution of bulk defects primarily oxygen vacancies as well as non-lattice oxygen ions. This, in turn, also affects the corresponding resistance of bulk as well as other electrical parameters at the interface. Further conduction mechanism of the device with interfacial oxide formation as well as dissolution to impact resistive switching behavior has been elaborated. © 2020 IEEE.
Topics: Resistive random-access memory (61)%61% related to the paper, Resistive touchscreen (55)%55% related to the paper and Memristor (53)%53% related to the paper
View more info for "Effect of applied bias on Schottky interface to affect resistive switching in a memristive device"
Content may be subject to copyright.
About the journal
Published in Institute of Electrical and Electronics Engineers Inc.
Open Access
noImpact factor
N/AAuthors (1)
Rohit Singh- Crossing the Nernst Limit (59 mV/pH) of Sensitivity through Tunneling Transistor-Based Biosensor
- A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor-Based Biosensor
- Impact of back-gate voltage on sensing metric of dielectric modulated Tunnel FET biosensor
- Effect of applied bias on Schottky interface to affect resistive switching in a memristive device
