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Crystalline ripples at the surface of ion eroded strained Si0.8 Ge0.2 epilayersPublished in
2010
DOI: 10.1063/1.3369391
Volume: 107
Issue: 7
Surface erosion of a strained Si0.8 Ge0.2 epilayer by 500 eV Ar+ ions with a fluence of 4×1017 ions/cm2 and the transformation from crystalline ripples to elongated Ge islands are reported by aligning the beam from 69° to 50° from the surface normal. Crystalline nature and the near surface Ge enrichment in such ripple structures are revealed by transmission electron microscopy. Moreover, ion beam induced decomposition of the SiGe network and the appearance of dislocation bands by suppressing the near-bandgap emission are manifested by μ -Raman and photoluminescence studies, respectively. © 2010 American Institute of Physics.
Topics: Ion beam (56)%56% related to the paper, Transmission electron microscopy (51)%51% related to the paper and High-resolution transmission electron microscopy (51)%51% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Crystalline ripples at the surface of ion eroded strained Si0.8Ge0.2 epilayers. Journal of Applied Physics 107, 7 p073513 (2010)] and may be found at https://doi.org/10.1063/1.3369391.
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