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Carbon doping-induced defect centers in anodized alumina with enhanced optically stimulated luminescence
S. Bhowmick, S. Pal, A. Singh, S.A. Khan, D.R. Mishra, R.J. Choudhary, D.M. Phase, T.K. Chini, A.K. Bakshi,
Published in Springer
Volume: 32
Issue: 8
Pages: 10635 - 10643
Anodized aluminum oxide (AAO) in amorphous form is shown to be a prospective phosphor for optically stimulated luminescence (OSL) by implanting 50 keV carbon ions at a fluence of 1 × 1016 ions/cm2 at room temperature. An almost 20-fold enhancement in continuous wave OSL (CW-OSL) sensitivity is obtained in carbon-doped AAO (C:AAO) by exposing to beta radiation, while an almost linear increase in CW-OSL intensity is recorded with increasing dose from 0.3 to 5 Gy. However, cathodoluminescence (CL) suggests an upsurge of oxygen vacancies, especially F+ and F22+ centers, at the cost of F center-related defects in C:AAO. Detailed X-ray photoelectron spectroscopy (XPS) analysis further reveals that the implanted carbon atoms can act as cationic impurities in AAO and stabilize the nearby F+ centers via substitution of Al3+ by C2+. The combined CL and XPS results are also shown to be capable of illustrating the CW-OSL response. This study would, therefore, be a benchmark for understanding the role of carbon in the substitutional sites of AAO for generating OSL active electron traps. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
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