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Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties
Datta D.P., , Satpati B., Dhara S., Das T.D., Kanjilal D., Som T.
Published in American Institute of Physics Inc.
Volume: 116
Issue: 3
Room temperature implantation of 60 keV Ar+-ions in GaSb to the fluences of 7 × 1016 to 3 × 1018 ions cm -2 is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb. © 2014 AIP Publishing LLC.
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Published in American Institute of Physics Inc.
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