Critical Read Stability (TREAD) and Critical Writeability (TWRITE) are two SRAM metrics which can characterize the dynamic behavior of read and write operations. In this paper, the impact of NBTI on TREAD and TWRITE is shown. Worst-case use conditions are identified by varying the relative degradation of the two p-FETs. Monte-Carlo simulations using foundry models (High-k Metal Gate planar MOSFET) are performed to analyze time-zero variability for different use conditions. The dynamic metrics TREAD and TWRITE are correlated with static metrics SVNM and BWTV respectively for worst-case use conditions. Degradation trend of TREAD and TWRITE is then discussed for worst and symmetric NBTI degradation cases by varying ΔVTH. © 2018 IEEE.