Second Breakdown phenomenon (It2) in drain extended NMOS (DENMOS) which is associated with complex triggering of the parasitic BJT is relatively less understood. We present experiments and models to understand the physics of snapback in DENMOS in nanometer scale technologies. Avalanche injection phenomenon at the drain contact has been analyzed for a 90 nm DENMOS transistor under high current stressing. © 2007 IEEE.

Amitabh Chatterjee

Electrical Engineering

(SoE) School of Engineering

S. Pendharkar

Y.-Y. Lin

C. Duvvury

K. Banerjee

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Shiv Nadar University

An Insight into the High Current ESD Behavior of Drain Extended NMOS (DENMOS) Devices in Nanometer Scale CMOS Technologies

Annual Proceedings - Reliability Physics (Symposium)

An insight into the high current ESD behavior of drain extended NMOS (DENMOS) devices in nanometer scale CMOS technologies