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An insight into the high current ESD behavior of drain extended NMOS (DENMOS) devices in nanometer scale CMOS technologies
, S. Pendharkar, Y.-Y. Lin, C. Duvvury, K. Banerjee
Published in
Pages: 608 - 609
Second Breakdown phenomenon (It2) in drain extended NMOS (DENMOS) which is associated with complex triggering of the parasitic BJT is relatively less understood. We present experiments and models to understand the physics of snapback in DENMOS in nanometer scale technologies. Avalanche injection phenomenon at the drain contact has been analyzed for a 90 nm DENMOS transistor under high current stressing. © 2007 IEEE.
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