We present a detailed understanding of filamentation, through rigorous mixed-mode 3D simulation in a nano-meter scale drainextended NMOS (DE-NMOS). Localization is first triggered in the 2D plane due to regenerative turn-on of the parasitic bipolar. 3D Simulations performed by adding width along the Z-axis (i.e., W) show a very prominent localization effect, which leads to electro-thermal runaway in the DE-NMOS and causes an irreversible damage. © 2008 IEEE.

Amitabh Chatterjee

Electrical Engineering

(SoE) School of Engineering

S. Pendharkar

H. Gossner

C. Duvvury

K. Banerjee

<p>Shiv Nadar University is a comprehensive, multidisciplinary, research-focused, and student-centric University offering a full range of academic programs at the undergraduate, postgraduate and doctoral level. With state-of-the-art infrastructure, the University comprises of academic wings, sophisticated labs, international standard sports facilities, amphitheaters, auditorium, conference rooms and smart classrooms. The University&rsquo;s goal is to become internationally recognized for the quality of its research and creative endeavors and their applicability to improving quality of life, generating new insights and expanding the boundaries of human knowledge creativity. Committed to excellence in teaching, research and service, the University aims to serve the higher education needs of India and the world beyond.</p>

Shiv Nadar University

3D device modeling of damage due to filamentation under an ESD event in nanometer scale drain extended NMOS (DE-NMOS)

IEEE International Reliability Physics Symposium Proceedings