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Supersymmetry across nanoscale heterojunction
, A. Ganguly, A. Sinha
Published in Elsevier B.V.
Volume: 374
Issue: 23
Pages: 2397 - 2400
We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-type potentials. © 2010 Elsevier B.V. All rights reserved.
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Published in Elsevier B.V.
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