This paper reports on the changes occurring in the concentration versus depth profiles of hydrogen in undoped semi-insulating (SI) GaAs (100) crystals. DC plasma ion implanted SI-GaAs samples were isochronally annealed in vacuum in the range of 100-350 °C. Hydrogen depth profiling has been performed by elastic recoil detection analysis technique. The changes in the H profiles have been explained on the basis of migration of hydrogen towards the defect-rich region produced during plasma ion implantation.

Sankar Dhar

Physics

(SoNS) School of Natural Sciences

T. Som

Y.N. Mohapatra

V.N. Kulkarni

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