The doping single-crystalline α-quartz with 120 keV Ge +-ion implantation under the condition of dynamic solid phase epitaxial regrowth was discussed. The light emitting properties possibly suitable for optoelectronic devices were analyzed by measuring cathodoluminescence spectra. It was found that the Ge implantation produced amorphous layers varying in depth with temperature. Analysis shows that at a fluence of 7×10 14 Ge-ions/cm 2 and an implantation temperature of 1073 K, Ge implantation was accompanied by a strong increase in the luminescence.