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Room temperature rectifying characteristics of epitaxial Y 1Ba 2Cu 3-xZn xO 7-δ (x=0.0,0.2) and Nb:SrTiO 3 (Nb: 0.05%, 0.1%, 0.5%) heterojunctionsPublished in
2006
DOI: 10.1063/1.2172867
Volume: 99
Issue: 4
We report on the fabrication and electrical characterization of epitaxial metal-semiconductor junctions between Y1 Ba2 Cu3 O7-δ (YBCO) (optimally doped and Zn doped) and (001) Nb:SrTi O3 with different Nb concentrations (0.05%, 0.1%, and 0.5%). The current-voltage characteristics of such epitaxial junctions are nonlinear and rectifying, and these are dramatically enhanced with decreasing Nb concentration and Zn doping. Indeed, for the case of 0.05% Nb:STO, reverse breakdown voltage as high as -18 V (-28 V) is realized for optimally doped (Zn doped) YBCO. These data are analyzed within the framework of thermionic emissiondiffusion models for Schottky and metal-insulator- semiconductor-type junctions. © 2006 American Institute of Physics.
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Room temperature rectifying characteristics of epitaxial Y1Ba2Cu3?xZnxO7?? (x=0.0,0.2) and Nb:SrTiO3 (Nb: 0.05%, 0.1%, 0.5%) heterojunctions. Journal of Applied Physics 99, 4 p043906 (2006)] and may be found at https://doi.org/10.1063/1.2172867.
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