Increasing leakage currents with CMOS technology scaling and the volatile nature of SRAM based memory technologies brings in the scope for several emerging nonvolatile memories such as spin transfer torque (STT) MRAMs. Their ability to consume low power, reliability and lower area overhead makes them eligible for a wide range of applications. In this paper, a novel pre charge sense amplifier (PCSA) based nonvolatile AND-LUT has been proposed and compare it's performance with conventional SRAM SA based AND LUT using hybrid 0.18μm CMOS-magnetic tunnel junctions (MTJ) technology. It has been demonstrated that the proposed design exhibits lower total power consumption, reduced latency, near full voltage swings, and lower energy (∼21\% reduction). This opens door forenergy efficient non-volatile logic circuits such as new FPGA architectures with hybrid CMOS-MTJ technology. © 2016 IEEE.