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Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon
D.C. Kundaliya, S.B. Ogale, , K.F. McDonald, E. Knoesel, T. Osedach, S.E. Lofland, S.R. Shinde, T. Venkatesan
Published in
Volume: 299
Issue: 2
Pages: 307 - 311
Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (1 0 0) substrate. The ferromagnetic transition temperature (TC∼215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ∼15° in the ferromagnetic state. © 2005 Elsevier B.V. All rights reserved.
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