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Ion-induced room temperature synthesis of low resistive nickel germanide phase
, T. Som, V.N. Kulkarni
Published in American Institute of Physics Inc.
Volume: 83
Issue: 4
Pages: 2363 - 2365
Low resistivity Ni2Ge phase, a promising candidate as a contact and interconnect material for very large scale integrated circuit applications, has been synthesized by MeV ion beam mixing using Kr and Ar ions at and above room temperatures. Thin films of this phase produced by ion beam mixing show resistivity comparable to the one produced by thermal annealing and is much lower than that of many important suicides. The critical temperature which marks the beginning of the temperature dependent mixing is 326 K. The room temperature mixing efficiency for this system is found to be about an order of magnitude higher than the value predicted by any of the existing ballistic and spike models. The crystalline nature of the mixed region and the occurrence of the Ni2Ge phase have been discussed. © 1998 American Institute of Physics.
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Published in American Institute of Physics Inc.
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