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Interfacial characteristics of a Fe 3O 4Nb/(0.5%): SrTiO 3 oxide junctionPublished in
2006
DOI: 10.1063/1.2173227
Volume: 99
Issue: 8
The temperature dependent Schottky diode characteristics of epitaxial junctions between Nb:SrTi O3 (Nb concentrations: 0.5%) and Fe3 O4 are studied. Epitaxial thin films of Fe3 O4 were grown on Nb:SrTi O3 substrates by pulsed laser deposition technique. The films and heterointerfaces were characterized by x-ray diffraction, Z -contrast transmission electron microscopy, magnetic susceptibility, four-probe in-plane resistivity, and the temperature dependent junction current-voltage (I-V) characteristics. The nonlinear nature of the characteristics is analyzed within the framework of thermionic emission theory. Junction parameters such as the Schottky barrier height (φB) and ideality factor (η) are extracted. The temperature evolution of these parameters shows interesting and systematic trends, with remarkable changes near the Verwey transition (TV =120 K). The magnetic field dependence of I-V characteristic data is also recorded and a spin polarization of ∼80% is estimated for the magnetite electrode. © 2006 American Institute of Physics.
Topics: Schottky barrier (61)%61% related to the paper, Schottky diode (55)%55% related to the paper, Pulsed laser deposition (52)%52% related to the paper, Thermionic emission (51)%51% related to the paper and Spin polarization (51)%51% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Interfacial characteristics of a Fe3O4?Nb(0.5%):SrTiO3 oxide junction. Journal of Applied Physics 99, 8 p08K304 (2006)] and may be found at https://doi.org/10.1063/1.2173227.
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