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Interface mixing in Ta/Si bilayers with Ar ions
N. Bibic, , M. Milosavljevic, K. Removic, L. Rissanen, K.P. Lieb
Published in Elsevier Science Publishers B.V.
Volume: 161
Pages: 1011 - 1015
We report on the room-temperature synthesis of the low-resistivity TaSi2 phase using ion-beam mixing of Ta/Si bilayers with Ar ions. The formation of the silicide phase is observed for different damage energies deposited at the Ta/Si interface. The variance Δσ2 of the reacted (TaSi2) layer thickness varies linearly with the ion fluence Φ and the reaction rate Δσ2/Φ is proportional to the deposited damage energy density FD. The measured mixing/reaction efficiency, Δσ2/ΦFD = 10 ± 1 nm5/keV, is in agreement with the value calculated by the model of compound formation under local thermal spikes.
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Published in Elsevier Science Publishers B.V.
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