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Growth of highly oriented Hf O2 thin films of monoclinic phase on yttrium-stabilized Zr O2 and Si substrates by pulsed-laser deposition
, M.S.R. Rao, S.B. Ogale, D.C. Kundaliya, S.R. Shinde, T. Venkatesan, S.J. Welz, R. Erni, N.D. Browning
Published in
Volume: 87
Issue: 24
Pages: 1 - 3
We report on the growth of highly oriented Hf O2 thin films of monoclinic phase stabilized by 5% Co doping on (001) yttrium-stabilized zirconia (YSZ) using pulsed-laser deposition at 700 °C at an oxygen partial pressure of 10-4 Torr. On the other hand, pure Hf O2 of such quality did not grow on YSZ in wide range of growth parameters. Rutherford backscattering-ion channeling in this film showed a 24% minimum yield (χmin) indicating highly oriented film growth, while hardly any ion channeling was observed in the undoped sample. High-resolution transmission electron microscopy revealed a sharp interface, and no signature of Co clusters. Electron energy loss spectroscopy showed that Co is in the 2+ state. Attempts were also made to grow films on a (001) Si substrate, and the results showed a very low ion channeling yield (∼8%). © 2005 American Institute of Physics.
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