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Electrical characteristics of zinc oxide-organic semiconductor lateral heterostructure based hybrid field-effect bipolar transistorsPublished in
2011
DOI: 10.1063/1.3553191
Volume: 98
Issue: 7
Zinc oxide-organic semiconductor lateral heterostructure based field-effect bipolar transistors (FEBTs) having heterointerfaces approximately midway between the source and drain electrodes are fabricated and characterized. These hybrid FEBTs comprise zinc oxide (ZnO) and p -channel organic semiconductors [Pentacene and α -sexithiophene (6T)] supporting electron transport and hole transport on either side of the heterojunction, respectively. Current flow in the transistor channel is established as a result of carrier injection across the heterointerface followed by recombination. In steady state, such devices possess significant populations of holes and electrons in the transistor channel and operate in bipolar mode. © 2011 American Institute of Physics.
Topics: Heterostructure-emitter bipolar transistor (66)%66% related to the paper, Field-effect transistor (63)%63% related to the paper, Bipolar junction transistor (61)%61% related to the paper, Heterojunction bipolar transistor (59)%59% related to the paper and Organic semiconductor (55)%55% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Electrical characteristics of zinc oxide-organic semiconductor lateral heterostructure based hybrid field-effect bipolar transistors. Applied Physics Letters 98, 7 p073302 (2011)] and may be found at https://doi.org/10.1063/1.3553191.
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