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Direct synthesis of β-FeSi2 by ion beam mixing of Fe/Si bilayers
M. Milosavljevic, , P. Schaaf, N. Bibic, M. Han, K.-P. Lieb
Published in Springer-Verlag GmbH & Company KG, Berlin, Germany
2000
Volume: 71
   
Issue: 1
Pages: 43 - 45
Abstract
The iron di-silicide β-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550°C is reported. The obtained single-phase β-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mossbauer spectroscopy.
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Published in Springer-Verlag GmbH & Company KG, Berlin, Germany
Open Access
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