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Defect level responsible for compensation in deep buried layers in n-type silicon
P.K. Giri, , V.N. Kulkarni, Y.N. Mohapatra
Published in SPIE, Bellingham, WA, United States
Volume: 3316
Issue: 1
Pages: 632 - 635
Buried damaged layers in n-silicon created by implantation of MeV heavy ions has been studied by capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS) techniques. In samples irradiated with doses below amorphization threshold, besides divacancy related trap, a new midgap acceptor trap level is isolated and shown to be responsible for carrier compensation. This defect level controls hysteresis in C-V characteristics and space charge limited current conduction in I-V characteristics. Possible origin of this defect have been discussed in the light of defect migration and cluster formation.
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Published in SPIE, Bellingham, WA, United States
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