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Comparison of graphite and BN/AIN annealing caps for ion implanted SiC
K.A. Jones, M.C. Wood, T.S. Zheleva, K.W. Kirchner, M.A. Derenge, A. Bolonikov, T.S. Sudarshan, R.D. Vispute, S.S. Hullavarad,
Published in Trans Tech Publications Ltd
Volume: 556-557
Pages: 575 - 578
4H-SiC samples implanted with 1020 Al were annealed at various temperatures with a BN/AIN or graphite cap, and there morphological, structural, and electrical properties are compared. No blow holes were observed in either cap. Some Si out-diffuses through the graphite cap which results in a rougher surface and a structurally modified region near the surface. The BN/AlN cap annealed at 1800°C cannot be readily removed, whereas the graphite cap can be removed easily after any annealing temperature. The sheet resistances for both types of samples were about the same.
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Published in Trans Tech Publications Ltd
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