In this paper, we report the device characteristics of ambipolar thin-film transistors (TFTs) based on a diketopyrrolopyrrole-benzothiadiazole copolymer. This polymer semiconductor exhibits the largest comparable electron and hole mobility values in a single organic semiconductor. The key to realizing such high mobility values, which are $0.5&cm}{2}/hbox{V}̇hbox{s, is molecular design, i.e., the use of suitable surface treatments of the source/drain contact electrodes and device architectures, particularly top-gate configurations. The subthreshold characteristics of the TFT devices are greatly improved by the use of dual-gate device geometry. We also report the first measurement of the velocity distribution of electron and hole velocities in an ambipolar organic semiconductor. © 2012 IEEE.

Samarendra Pratap Singh

Physics

(SoNS) School of Natural Sciences

Ha T.-J.

Sonar P.

Dodabalapur A.

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Shiv Nadar University

Characteristics of High-Performance Ambipolar Organic Field-Effect Transistors Based on a Diketopyrrolopyrrole-Benzothiadiazole Copolymer

IEEE Transactions on Electron Devices

Flexible and low-power consuming integrated circuits are some of the basic requirements for smart wearable devices. High mobility solution-processed organic field-effect transistors (OFETs) have the potential to make a big impact in printed electronic circuits, but their overall performance is currently limited by unusually high threshold voltages (Vth). Herein, systematic optimization of donor–acceptor conjugated polymer, based on dithienothiophene (DTT) and thiophene-flanked diketopyrrolopyrrole (DPP), namely, PDPPT–DTT, OFETs by application of self-assembled monolayers (SAMs) at the semiconductor–dielectric, and semiconductor–metal interfaces is reported. The results clearly exhibit that simultaneous application of octyltrichlorosilane (OTS) as semiconductor–dielectric interface modifying layer and pentafluorobenzene thiol (PFBT) as semiconductor–metal interface modifying layer results in significantly lower Vth and subthreshold slope values from −14.07 V and 13.26 (V Dec−1) to +1.06 V and 7.11 (V Dec−1), respectively. This tailored approach is also beneficial in enhancing hole mobility values by an order of magnitude from 0.01 to 0.5 cm2 V−1 s−1 along with the possibility of switching from hole accumulation mode (Vth = −3.75 V) to depletion mode (Vth = +1.06 V) through device engineering. Simultaneous interface engineering reveals OFET electronic properties can be fine-tuned for robust circuits and low power electronic applications. © 2020 Wiley-VCH GmbH

Physica Status Solidi (A) Applications and Materials Science

Reduced Threshold Voltages and Enhanced Mobilities in Diketopyrrolopyrrole–Dithienothiophene Polymer-Based Organic Transistor by Interface Engineering

Journal of the American Chemical Society

Molecular Packing of High-Mobility Diketo Pyrrolo-Pyrrole Polymer Semiconductors with Branched Alkyl Side Chains

Applied Physics Letters

High mobility top-gate and dual-gate polymer thin-film transistors based on diketopyrrolopyrrole-naphthalene copolymer

Charge carrier velocity distributions in field-effect transistors

Advanced Materials

A Low-Bandgap Diketopyrrolopyrrole-Benzothiadiazole-Based Copolymer for High-Mobility Ambipolar Organic Thin-Film Transistors

Journal of Applied Physics

Velocity-field characteristics of polycrystalline pentacene field-effect transistors

Characteristics of high-performance ambipolar organic field-effect transistors based on a diketopyrrolopyrrole-benzothiadiazole copolymer