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Characteristics of high-performance ambipolar organic field-effect transistors based on a diketopyrrolopyrrole-benzothiadiazole copolymer
Ha T.-J., Sonar P., , Dodabalapur A.
Published in
2012
Volume: 59
   
Issue: 5
Pages: 1494 - 1500
Abstract
In this paper, we report the device characteristics of ambipolar thin-film transistors (TFTs) based on a diketopyrrolopyrrole-benzothiadiazole copolymer. This polymer semiconductor exhibits the largest comparable electron and hole mobility values in a single organic semiconductor. The key to realizing such high mobility values, which are $0.5&cm}{2}/hbox{V}̇hbox{s, is molecular design, i.e., the use of suitable surface treatments of the source/drain contact electrodes and device architectures, particularly top-gate configurations. The subthreshold characteristics of the TFT devices are greatly improved by the use of dual-gate device geometry. We also report the first measurement of the velocity distribution of electron and hole velocities in an ambipolar organic semiconductor. © 2012 IEEE.
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Figures & Tables (7)
  • Figure-0
    Fig. 1. (a) Chemical structure ... Expand
  • Figure-1
    Fig. 2. (a) Output characteristics, (b) transfer ... Expand
  • Figure-2
    Fig. 4. Transfer characteristics of ambipolar PDPP-TBT TFTs ... Expand
  • Figure-3
    Fig. 5. Subthreshold slope in dual-gate mode operation ... Expand
  • Figure-4
    Fig. 3. Comparisons of the mobility and the threshold voltage ... Expand
  • Figure-5
    Fig. 6. Normalized transient response of ambipolar PDPP-TBT ... Expand
  • Figure-6
    Fig. 7. (a) Normalized transient response and (b) velocity ... Expand
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